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Part No
Brand
Specification
MPQ|MOQ
Quantity
US Dollar
Delivery Date
Operation
Tengling
Batch：两年内
MOS场效应管 类型：N沟道：漏源电压(Vdss)20V：连续漏极电流(Id)2.3A：导通电阻(RDS(on)@Vgs,Id):45mΩ
MPQ:3000
MOQ:50
50+
$0.00308
100+
$0.00303
500+
$0.00298
More
Tengling
Batch：两年内
N沟道：A09T丝印：漏源电压(Vdss)20V：连续漏极电流(Id)：2.5A：导通电阻(RDS(on)@Vgs,Id):45mΩ
MPQ:3000
MOQ:50
50+
$0.00317
100+
$0.00311
500+
$0.00306
More
Tengling
Batch：两年内
N沟道：7002K丝印：漏源电压(Vdss)60V：连续漏极电流(Id)：0.34A：导通电阻(RDS(on)@Vgs,Id):2Ω
MPQ:3000
MOQ:50
50+
$0.00317
100+
$0.00311
500+
$0.00306
More
Tengling
Batch：两年内
MOS场效应管 类型：N沟道：漏源电压(Vdss)50V：连续漏极电流(Id)0.34A：导通电阻(RDS(on)@Vgs,Id):2Ω
MPQ:3000
MOQ:50
50+
$0.00328
100+
$0.00323
500+
$0.00317
More
Tengling
Batch：两年内
P沟道：A19T丝印：漏源电压(Vdss)20V：连续漏极电流(Id)：2.5A：导通电阻(RDS(on)@Vgs,Id):100mΩ
MPQ:3000
MOQ:50
50+
$0.00333
100+
$0.00328
500+
$0.00322
More
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