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MOSFET (151) CPLD-FPGA ICs (41) Schottky diodes (32) (30) (17) Power inductors (7) IC and device sockets (4) Position sensors (4) Test and measurement (3) Switching diodes (2) Tapes/Labels (2) Development board kit (2) Dedicated switches (2) Angle sensors (2) Bipolar transistor (triode) (2) Accessories (1) Wireless modules (1) Pushbutton Switches (1) Junction field effect transistor (JFET) (1)
Part No
Brand
Specification
MPQ|MOQ
Quantity
US Dollar
Delivery Date
Operation
Tengling
Batch：两年内
MOS场效应管 类型：N沟道：漏源电压(Vdss)20V：连续漏极电流(Id)2.3A：导通电阻(RDS(on)@Vgs,Id):45mΩ
MPQ:3000
MOQ:50
50+
$0.00308
100+
$0.00302
500+
$0.00297
More
Tengling
Batch：两年内
P沟道：A1SHB丝印：漏源电压(Vdss)20V：连续漏极电流(Id)：2.3A：导通电阻(RDS(on)@Vgs,Id):100mΩ
MPQ:3000
MOQ:50
50+
$0.00333
100+
$0.00327
500+
$0.00321
More
Tengling
Batch：两年内
N沟道：2300丝印：漏源电压(Vdss)20V：连续漏极电流(Id)：3A：导通电阻(RDS(on)@Vgs,Id):35mΩ
MPQ:3000
MOQ:50
50+
$0.00416
100+
$0.00408
500+
$0.00401
More
Tengling
Batch：两年内
MOS场效应管 类型：N沟道：漏源电压(Vdss)20V：连续漏极电流(Id)3A：导通电阻(RDS(on)@Vgs,Id):35mΩ
MPQ:3000
MOQ:50
50+
$0.00422
100+
$0.00415
500+
$0.00408
More
Tengling
Batch：两年内
N沟道：A6SHB丝印：漏源电压(Vdss)20V：连续漏极电流(Id)：2.8A：导通电阻(RDS(on)@Vgs,Id):45mΩ
MPQ:3000
MOQ:50
50+
$0.00499
100+
$0.0049
500+
$0.00482
More
Tengling
Batch：两年内
N沟道：A2SHB丝印：漏源电压(Vdss)20V：连续漏极电流(Id)：2.8A：导通电阻(RDS(on)@Vgs,Id):45mΩ
MPQ:3000
MOQ:50
50+
$0.00499
100+
$0.0049
500+
$0.00482
More
Tengling
Batch：两年内
N沟道：AE9T丝印：漏源电压(Vdss)20V：连续漏极电流(Id)：2.8A：导通电阻(RDS(on)@Vgs,Id):45mΩ
MPQ:3000
MOQ:50
50+
$0.00499
100+
$0.0049
500+
$0.00482
More
Tengling
Batch：两年内
N沟道：2300丝印：漏源电压(Vdss)20V：连续漏极电流(Id)：2.8A：导通电阻(RDS(on)@Vgs,Id):45mΩ
MPQ:3000
MOQ:50
50+
$0.00499
100+
$0.0049
500+
$0.00482
More
Tengling
Batch：两年内
P沟道：A1SHB丝印：漏源电压(Vdss)20V：连续漏极电流(Id)：3A：导通电阻(RDS(on)@Vgs,Id):75mΩ
MPQ:3000
MOQ:50
50+
$0.00532
100+
$0.00523
500+
$0.00514
More
Tengling
Batch：两年内
MOS场效应管 类型：N沟道：漏源电压(Vdss)20V：连续漏极电流(Id)5.8A：导通电阻(RDS(on)@Vgs,Id):25mΩ
MPQ:3000
MOQ:50
50+
$0.00577
100+
$0.00567
500+
$0.00557
More
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