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RFQ Cart
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AO3402
MLSM
MOSFETs N-Channel 30V 4A SOT-23 VGS(th)=0.65~1.5V
MPQ:3000
MOQ:3000
3000+
$0.00869
Inquiry
AO3406
MLSM
MOSFETs N-Channel 30V 4A SOT-23 VGS(th)=1~2.5V
MPQ:3000
MOQ:3000
3000+
$0.00869
Inquiry
AGM3400E
AGMSEMI
N沟道 漏源电压(Vdss)：30V 连续漏极电流(Id):5.8A 功率(Pd)：1.2W 导通电阻(RDS(on)@Vgs,Id)：20mΩ@10V,4A 阈值电压(Vgs(th)@Id)：0.9V@250uA 栅极电荷(Qg@Vgs)：17nC@10V,工作温度：-55℃~+150℃@(Tj)...
MPQ:3000
MOQ:100
100+
$0.01653
500+
$0.01624
1000+
$0.01595
3000+
$0.01566
More
Inquiry
AGM3400E
AGMSEMI
N沟道 漏源电压(Vdss)：30V 连续漏极电流(Id):5.8A 功率(Pd)：1.2W 导通电阻(RDS(on)@Vgs,Id)：20mΩ@10V,4A 阈值电压(Vgs(th)@Id)：0.9V@250uA 栅极电荷(Qg@Vgs)：17nC@10V,工作温度：-55℃~+150℃@(Tj)...
MPQ:3000
MOQ:20
20+
$0.0344
200+
$0.02722
600+
$0.02364
Inquiry
AGM1099E
AGMSEMI
N沟道 漏源电压(Vdss)：100V 连续漏极电流(Id):5.0A 功率(Pd)：3.1W 导通电阻(RDS(on)@Vgs,Id)：100mΩ@10V,4A 阈值电压(Vgs(th)@Id)：1.8V@250uA 栅极电荷(Qg@Vgs)：3.57nC@10V,工作温度：-55℃~+150℃@...
MPQ:3000
MOQ:100
100+
$0.02644
500+
$0.02598
1000+
$0.02552
3000+
$0.02506
More
Inquiry
SSM3J14T-HXY
Huaxuanyang
Batch：25+
MPQ:3000
MOQ:3000
3000+
$0.02582
Inquiry
AGM1099EL
AGMSEMI
N沟道 漏源电压(Vdss)：100V 连续漏极电流(Id):5.0A 功率(Pd)：3.1W 导通电阻(RDS(on)@Vgs,Id)：100mΩ@10V,4A 阈值电压(Vgs(th)@Id)：1.8V@250uA 栅极电荷(Qg@Vgs)：3.57nC@10V,工作温度：-55℃~+150℃@...
MPQ:3000
MOQ:100
100+
$0.02975
500+
$0.02923
1000+
$0.02871
3000+
$0.02819
More
Inquiry
SSM3J14T-HXY
Huaxuanyang
SOT-23-3L
MPQ:3000
MOQ:5
5+
$0.05685
50+
$0.04496
150+
$0.03902
500+
$0.03458
3000+
$0.03101
6000+
$0.02923
More
Inquiry
RC035M331LO8*14TH-2A1E
Beryl
330uF ±20% 35V 3.5mm 2000Hour@105℃ -40℃~+105℃
MPQ:500
MOQ:10
10+
$0.06038
100+
$0.04675
500+
$0.03994
1000+
$0.03482
5000+
$0.03073
More
Inquiry
AGML315ME
AGMSEMI
N+P沟道 漏源电压(Vdss)：30/-30V 连续漏极电流(Id)：5.6A/-4.2A 功率(Pd)：1.28W 导通电阻(RDS(on)@Vgs,Id)：25mΩ@10V,4A /43mΩ@-10V，-4A 阈值电压(Vgs(th)@Id)：0.9V@250uA 栅极电荷(Qg@Vgs)：1...
MPQ:3000
MOQ:100
100+
$0.03305
500+
$0.03248
1000+
$0.0319
3000+
$0.03133
More
Inquiry
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