YJQD12N03A
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封装:SOT-23 结构:Single 产品极性:N 漏源电压:20 栅源电压:±10
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封装:SOT-23 极性:PNP 集电极耗散功率 mW:300 集电极电流 mA:-600 集电极基极击穿电压 V:-60 集电极发射极击穿电压 V:-60 发射极击穿电压BVEBO:100 频率Ft:200
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封装:SOT-23 极性:NPN 集电极耗散功率PCM（mW）:300 集电极电流IC（mA）:600 集电极发射极击穿电压BVCEO(V) :160 放大倍数 Min:100 放大倍数 Max:300
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ES3D
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封装:SMC 最大正向电流lo(A):3 最大反向峰值电压VRM (V):200 最大正向浪涌电流IFSM(A):100 最大正向压降VF(V):0.95 最大反向漏电流IR@25℃IR(uA):5 最大反向恢复时间 Trr（ns）:35 结电容 Cj(PF):60 工作结温Tj（℃）:-55～+150
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封装:SMA 最大正向电流lo(A):5 最大反向峰值电压VRM (V):100 最大正向浪涌电流IFSM(A):100 最大正向压降VF(V):0.85 最大反向漏电流IR@25℃IR(uA):0.1 结电容 Cj(PF):150 工作结温Tj（℃）:-55～+150
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