BZT52B5V6SQ
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封装:SOT-363 极性:NPN+PNP 集电极耗散功率 mW:200 集电极电流 mA:200</br>-150 集电极基极击穿电压 V:60</br>-40 集电极发射极击穿电压 V:40</br>-40 发射极击穿电压BVEBO:100</br>100 频率Ft:300</br>250
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DAP202
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封装:SOT-23 损耗功率 PD:200 平均电流 IF:100 反向击穿电压 VBR:80 正向电压:1.2 正向测试电流 IF:100 反向漏电流 IRM:0.1 反向测试电压 VR:70 反向恢复时间 trr:4
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SMA 最大正向电流lo(A):5 最大反向峰值电压VRM (V):200 最大正向浪涌电流IFSM(A):100 最大正向压降VF(V):0.9 最大反向漏电流IR@25℃IR(uA):0.1 结电容Cj(PF):80 工作结温Tj（℃）:-55～+150
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BZT52B5V6SQ
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封装:SOD-323 损耗功率:300 稳压值VZ@IZT Nom(V):5.6 测试电流 (mA) :5 动态电阻 ZZT@IZT(Ω):40 测试电流 Izk (mA):1 动态电阻 ZZT@IZT(Ω):400 反向漏电流 IR@VR(μA) :1 反向测试电压 VR(V):2
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YJD90N06A TO-252
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封装:SOD-323 损耗功率 PD(mW):300 稳压值VZ@IZT Nom(V):12 测试电流 IZT(mA):5 动态电阻 ZZT@IZT(Ω):25 测试电流 Izk (mA):1 动态电阻 ZZT@IZT(Ω):150 反向漏电流 IR@VR(μA):0.1 反向测试电压 VR(V):8
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