SQJ860EP-T1_GE3

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Specification
VDS | 40 V |
Termination type | SMD/SMT |
Rds On | 5 mOhms |
Qualification level | AEC-Q101 |
Pd-Power Dissipation | 48 W |
Continuous drain current | 60 A |
工厂最小包装 | 3000 |
寿命周期 | 量产 |
ROHS | no |
Circuit Branch Number | 1 Channel |
Package | PowerPAK® SO-8 |
Length | 6.15 mm |
Operating Temperature Range | - 55 C~+ 175 C |
Transistor polarity | MOSFET |
VGS | 20 V |
Qg | 55 nC |
Height | 1.04 mm |
Width | 5.13 mm |
SQJ860EP-T1_GE3 Releted Information
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