SQJ200EP-T1_GE3
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Specification
| VDS | 20 V |
| Qualification level | AEC-Q101 |
| Termination type | SMD/SMT |
| Rds On | 7.4 mOhms, 3.1 mOhms |
| Pd-Power Dissipation | 27 W, 48 W |
| Continuous drain current | 20 A, 60 A |
| 工厂最小包装 | 1 |
| 寿命周期 | 量产 |
| ROHS | no |
| VGS | 20 V |
| Package | PowerPAK-SO-8L-4 |
| Transistor polarity | MOSFET |
| Qg | 18 nC, 43 nC |
| Height | 1.04 mm |
| Operating Temperature Range | - 55 C~+ 175 C |
| Circuit Branch Number | 2 Channel |
| Length | 6.15 mm |
| Width | 5.13 mm |
SQJ200EP-T1_GE3 Releted Information
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