SQJ200EP-T1_GE3

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Specification
VDS | 20 V |
Rds On | 7.4 mOhms, 3.1 mOhms |
Termination type | SMD/SMT |
Qualification level | AEC-Q101 |
Pd-Power Dissipation | 27 W, 48 W |
Continuous drain current | 20 A, 60 A |
工厂最小包装 | 1 |
寿命周期 | 量产 |
ROHS | no |
Transistor polarity | MOSFET |
VGS | 20 V |
Package | PowerPAK-SO-8L-4 |
Operating Temperature Range | - 55 C~+ 175 C |
Circuit Branch Number | 2 Channel |
Length | 6.15 mm |
Width | 5.13 mm |
Qg | 18 nC, 43 nC |
Height | 1.04 mm |
SQJ200EP-T1_GE3 Releted Information
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