SQD25N15-52_GE3
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Specification
| Rds On | 38 mOhms |
| Pd-Power Dissipation | 107 W |
| Qualification level | AEC-Q101 |
| Continuous drain current | 25 A |
| Termination type | SMD/SMT |
| VDS | 150 V |
| 工厂最小包装 | 2000 |
| 寿命周期 | 量产 |
| ROHS | yes |
| Operating Temperature Range | - 55 C~+ 175 C |
| Package | TO-252-3 |
| Qg | 51 nC |
| Height | 2.38 mm |
| Transistor polarity | MOSFET |
| Length | 6.73 mm |
| Width | 6.22 mm |
| VGS | 20 V |
| Circuit Branch Number | 1 Channel |
SQD25N15-52_GE3 Releted Information
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