SISS32DN-T1-GE3
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Specification
| Pd-Power Dissipation | 65.7 W |
| Rds On | 7.2 mOhms |
| Continuous drain current | 63 A |
| Termination type | SMD/SMT |
| VDS | 80 V |
| 工厂最小包装 | 3000 |
| 寿命周期 | 量产 |
| ROHS | no |
| Transistor polarity | MOSFET |
| Package | PowerPAK1212-8 |
| VGS | 20 V |
| Qg | 42 nC |
| Operating Temperature Range | - 55 C~+ 150 C |
| Circuit Branch Number | 1 Channel |
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