SISH101DN-T1-GE3

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Specification
VDS | 30 V |
Rds On | 7.2 mOhms |
Continuous drain current | - 35 A |
Pd-Power Dissipation | 52 W |
Termination type | SMD/SMT |
工厂最小包装 | 1 |
寿命周期 | 量产 |
ROHS | no |
Circuit Branch Number | 1 Channel |
Qg | 102 nC |
Transistor polarity | MOSFET |
Package | PowerPAK-1212-8SH-8 |
VGS | 25 V |
Operating Temperature Range | - 55 C~+ 150 C |
SISH101DN-T1-GE3 Releted Information
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