SIHU6N62E-GE3
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Specification
| Rds On | 900 mOhms |
| VDS | 620 V |
| Continuous drain current | 6 A |
| Pd-Power Dissipation | 78 W |
| Termination type | Through Hole |
| 工厂最小包装 | 75 |
| 寿命周期 | 量产 |
| ROHS | no |
| Qg | 17 nC |
| Width | 2.39 mm |
| Operating Temperature Range | - 55 C~+ 150 C |
| Height | 6.22 mm |
| Package | IPAK(TO-251) |
| Transistor polarity | MOSFET |
| Length | 6.73 mm |
| VGS | 30 V |
| Circuit Branch Number | 1 Channel |
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