SIHJ7N65E-T1-GE3
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Specification
| Pd-Power Dissipation | 96 W |
| Rds On | 520 mOhms |
| Termination type | SMD/SMT |
| VDS | 650 V |
| Continuous drain current | 7.9 A |
| 工厂最小包装 | 1 |
| 寿命周期 | 量产 |
| ROHS | no |
| Qg | 22 nC |
| Height | 1.04 mm |
| Length | 6.15 mm |
| Package | PowerPAK-SO-8L-4 |
| Circuit Branch Number | 1 Channel |
| Width | 5.13 mm |
| Operating Temperature Range | - 55 C~+ 150 C |
| Transistor polarity | MOSFET |
| VGS | 30 V |
SIHJ7N65E-T1-GE3 Releted Information
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