SIHG80N60EF-GE3

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Specification
Rds On | 32 mOhms |
Pd-Power Dissipation | 520 W |
Continuous drain current | 80 A |
VDS | 600 V |
Termination type | Through Hole |
工厂最小包装 | 500 |
寿命周期 | 量产 |
ROHS | no |
Operating Temperature Range | - 55 C~+ 150 C |
VGS | 30 V |
Qg | 400 nC |
Transistor polarity | MOSFET |
Package | TO-247AC-3 |
Circuit Branch Number | 1 Channel |
SIHG80N60EF-GE3 Releted Information
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