SIHG80N60EF-GE3
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Specification
| Rds On | 32 mOhms |
| Pd-Power Dissipation | 520 W |
| Continuous drain current | 80 A |
| VDS | 600 V |
| Termination type | Through Hole |
| 工厂最小包装 | 500 |
| 寿命周期 | 量产 |
| ROHS | no |
| Operating Temperature Range | - 55 C~+ 150 C |
| VGS | 30 V |
| Package | TO-247AC-3 |
| Qg | 400 nC |
| Circuit Branch Number | 1 Channel |
| Transistor polarity | MOSFET |
SIHG80N60EF-GE3 Releted Information
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