SIHG20N50C-E3
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Specification
| Pd-Power Dissipation | 250 mW |
| Package | TO-247-3 |
| Continuous drain current | 20 A |
| 工厂最小包装 | 500 |
| 寿命周期 | 量产 |
| ROHS | no |
| VDS | 500 V |
| Operating Temperature Range | - 55 C~+ 150 C |
| Circuit Branch Number | 1 Channel |
| Termination type | Through Hole |
| Rds On | 270 mOhms |
| Length | 15.87 mm |
| VGS | 10 V |
| Transistor polarity | MOSFET |
| Qg | 65 nC |
| Height | 20.82 mm |
| Width | 5.31 mm |
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