SIHB12N60E-GE3

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Specification
Continuous drain current | 12 A |
VDS | 650 V |
Termination type | SMD/SMT |
Rds On | 380 mOhms |
Pd-Power Dissipation | 147 W |
工厂最小包装 | 1000 |
寿命周期 | 量产 |
ROHS | no |
Transistor polarity | MOSFET |
Package | TO-263-3 |
Circuit Branch Number | 1 Channel |
Operating Temperature Range | - 55 C~+ 150 C |
VGS | 30 V |
Qg | 29 nC |
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