SIA430DJT-T1-GE3
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Specification
| VDS | 20V |
| Termination type | SMD/SMT |
| Pd-Power Dissipation | 19.2W(Tc) |
| 工厂最小包装 | 3000 |
| 寿命周期 | 量产 |
| ROHS | no |
| Width | 2.05 mm |
| Package | PowerPAK-SC70-6 |
| Transistor polarity | MOSFET |
| Operating Temperature Range | -55°C~150°C(TJ) |
| Length | 2.05 mm |
| Height | 0.75 mm |
SIA430DJT-T1-GE3 Releted Information
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