SI8817DB-T2-E1

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Specification
Package | MicroFoot-4 |
Pd-Power Dissipation | 900 mW |
Continuous drain current | 2.9 A |
工厂最小包装 | 3000 |
寿命周期 | 量产 |
ROHS | no |
Termination type | SMD/SMT |
VGS | 8 V |
Qg | 19 nC |
Height | 0.65 mm |
Circuit Branch Number | 1 Channel |
Transistor polarity | MOSFET |
Rds On | 61 mOhms |
Length | 1.6 mm |
Width | 1.6 mm |
Operating Temperature Range | - 55 C~+ 150 C |
VDS | 20 V |
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SI8817DB-T2-E1 Releted Information
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