SI5419DU-T1-GE3
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Specification
| Pd-Power Dissipation | 3.1W(Ta),31W(Tc) |
| Package | ChipFET-8 |
| Continuous drain current | 12A(Tc) |
| 工厂最小包装 | 3000 |
| 寿命周期 | 量产 |
| ROHS | no |
| Termination type | SMD/SMT |
| Length | 3 mm |
| Width | 1.8 mm |
| Transistor polarity | MOSFET |
| VGS | 2.5V @ 250uA |
| Height | 0.75 mm |
| Operating Temperature Range | -55°C~150°C(TJ) |
| Rds On | 20mΩ @ 6.6A,10V |
| VDS | 30V |
SI5419DU-T1-GE3 Releted Information
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