SI4931DY-T1-GE3

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Specification
Package | SO-8 |
Pd-Power Dissipation | 2 W |
Continuous drain current | 8.9 A |
工厂最小包装 | 2500 |
寿命周期 | 量产 |
ROHS | no |
Qg | 52 nC |
Height | 1.75 mm |
VGS | 8 V |
Operating Temperature Range | - 55 C~+ 150 C |
Circuit Branch Number | 2 Channel |
Transistor polarity | MOSFET |
Rds On | 18 mOhms |
VDS | 12 V |
Length | 4.9 mm |
Width | 3.9 mm |
Termination type | SMD/SMT |
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