SI4909DY-T1-GE3
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Specification
| Pd-Power Dissipation | 3.2 W |
| Continuous drain current | 8 A |
| Package | SO-8 |
| 工厂最小包装 | 2500 |
| 寿命周期 | 量产 |
| ROHS | no |
| Operating Temperature Range | - 55 C~+ 150 C |
| Transistor polarity | MOSFET |
| Rds On | 27 mOhms |
| Circuit Branch Number | 2 Channel |
| VDS | 40 V |
| Termination type | SMD/SMT |
| VGS | 20 V |
| Qg | 63 nC |
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