SI4800BDY-T1-GE3
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Specification
| Package | SOIC-8 |
| Pd-Power Dissipation | 1.3W(Ta) |
| Continuous drain current | 6.5A |
| 工厂最小包装 | 2500 |
| 寿命周期 | 量产 |
| ROHS | no |
| Height | 1.75 mm |
| Rds On | 18.5mΩ @ 9A,10V |
| Termination type | SMD/SMT |
| Operating Temperature Range | -55°C~150°C(TJ) |
| Length | 4.9 mm |
| Width | 3.9 mm |
| VGS | 1.8V @ 250uA |
| VDS | 30V |
| Transistor polarity | MOSFET |
SI4800BDY-T1-GE3 Releted Information
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