SI4599DY-T1-GE3

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Specification
Pd-Power Dissipation | 3 W, 3.1 W |
Continuous drain current | 5.8 A, 6.8 A |
Package | SOIC-8 |
工厂最小包装 | 2500 |
寿命周期 | 量产 |
ROHS | no |
VDS | 40 V |
Length | 4.9 mm |
Width | 3.9 mm |
Qg | 11.7 nC, 25 nC |
Height | 1.75 mm |
VGS | 10 V |
Transistor polarity | MOSFET |
Termination type | SMD/SMT |
Circuit Branch Number | 2 Channel |
Operating Temperature Range | - 55 C~+ 150 C |
Rds On | 35.5 mOhms, 45 mOhms |
SI4599DY-T1-GE3 Releted Information
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