SI4178DY-T1-GE3
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Specification
| Pd-Power Dissipation | 5 W |
| Rds On | 21 mOhms |
| VDS | 30 V |
| Termination type | SMD/SMT |
| Continuous drain current | 12 A |
| 工厂最小包装 | 2500 |
| 寿命周期 | 量产 |
| ROHS | no |
| Qg | 7.5 nC |
| Length | 4.9 mm |
| Operating Temperature Range | - 55 C~+ 150 C |
| VGS | 10 V |
| Transistor polarity | MOSFET |
| Circuit Branch Number | 1 Channel |
| Package | SOIC-8 |
| Height | 1.75 mm |
| Width | 3.9 mm |
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