SI3459BDV-T1-GE3

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Specification
Termination type | SMD/SMT |
Pd-Power Dissipation | 3.3 W |
Continuous drain current | 2.9 A |
Rds On | 216 mOhms |
VDS | 60 V |
工厂最小包装 | 3000 |
寿命周期 | 量产 |
ROHS | no |
Package | SOT-23-6 |
Circuit Branch Number | 1 Channel |
VGS | 10 V |
Operating Temperature Range | - 55 C~+ 150 C |
Qg | 7.7 nC |
Length | 3.05 mm |
Transistor polarity | MOSFET |
Width | 1.65 mm |
Height | 1.1 mm |
SI3459BDV-T1-GE3 Releted Information
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