SI2319DS-T1-GE3
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Specification
| Rds On | 82 mOhms |
| Termination type | SMD/SMT |
| Pd-Power Dissipation | 0.75 W |
| Continuous drain current | 2.3 A |
| VDS | 40 V |
| 工厂最小包装 | 1 |
| 寿命周期 | 量产 |
| ROHS | no |
| Length | 2.9 mm |
| Width | 1.6 mm |
| Operating Temperature Range | - 55 C~+ 150 C |
| Transistor polarity | MOSFET |
| Circuit Branch Number | 1 Channel |
| Package | SOT-23-3 |
| Qg | 11.3 nC |
| Height | 1.45 mm |
| VGS | 10 V |
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