SI2312BDS-T1-GE3
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Specification
| Continuous drain current | 3.9 A |
| Pd-Power Dissipation | 0.75 W |
| Package | SOT-23-3 |
| 工厂最小包装 | 3000 |
| 寿命周期 | 量产 |
| ROHS | no |
| Circuit Branch Number | 1 Channel |
| Rds On | 31 mOhms |
| Qg | 7.5 nC |
| Height | 1.45 mm |
| VGS | 4.5 V |
| VDS | 20 V |
| Transistor polarity | MOSFET |
| Operating Temperature Range | - 55 C~+ 150 C |
| Termination type | SMD/SMT |
| Length | 2.9 mm |
| Width | 1.6 mm |
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