IRFB9N65APBF

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Specification
Termination type | Through Hole |
VDS | 650V |
Pd-Power Dissipation | 167W(Tc) |
工厂最小包装 | 1000 |
寿命周期 | 量产 |
ROHS | no |
Operating Temperature Range | -55°C~150°C(TJ) |
Transistor polarity | MOSFET |
Height | 15.49 mm |
Length | 10.41 mm |
Width | 4.7 mm |
Package | TO-220AB |
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