HYG038N03LR1D-VB
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HYG038N03LR1C2-VB
VBsemi
DFN8(5X6) N—Channel沟道 30V 120A RDS(ON)=3(mΩ)@VGS=10V VGS=±20V Vth=1.7V 采用Trench技术
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AP2762R-A-VB
VBsemi
TO262 N—Channel沟道 650V 7A RDS(ON)=1300(mΩ)@VGS=10V VGS=±30V Vth=3.5V 采用SJ_Multi-EPI技术
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FBC40L-VB
VBsemi
TO262 N—Channel沟道 650V 7A RDS(ON)=1300(mΩ)@VGS=10V VGS=±30V Vth=3.5V 采用SJ_Multi-EPI技术
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SIA453EDJ-T1-GE3-VB
VBsemi
DFN6(2X2) P—Channel沟道 -30V -10A RDS(ON)=17(mΩ)@VGS=10V VGS=±20V Vth=-1.7V 采用Trench技术
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FCI7N60-VB
VBsemi
TO262 N—Channel沟道 650V 7A RDS(ON)=1300(mΩ)@VGS=10V VGS=±30V Vth=3.5V 采用SJ_Multi-EPI技术
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AP3987R-VB
VBsemi
TO262 N—Channel沟道 650V 7A RDS(ON)=1300(mΩ)@VGS=10V VGS=±30V Vth=3.5V 采用SJ_Multi-EPI技术
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AOW10N65-VB
VBsemi
TO262 N—Channel沟道 650V 7A RDS(ON)=1300(mΩ)@VGS=10V VGS=±30V Vth=3.5V 采用SJ_Multi-EPI技术
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SPI07N60C3-VB
VBsemi
TO262 N—Channel沟道 650V 7A RDS(ON)=1300(mΩ)@VGS=10V VGS=±30V Vth=3.5V 采用SJ_Multi-EPI技术
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AP2761R-A-VB
VBsemi
TO262 N—Channel沟道 650V 7A RDS(ON)=1300(mΩ)@VGS=10V VGS=±30V Vth=3.5V 采用SJ_Multi-EPI技术
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AP09N70R-A-VB
VBsemi
TO262 N—Channel沟道 650V 7A RDS(ON)=1300(mΩ)@VGS=10V VGS=±30V Vth=3.5V 采用SJ_Multi-EPI技术
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