T835-600B-TR
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Specification
| Gate trigger voltage | 1.3V |
| Package | DPAK |
| 工厂最小包装 | 2500 |
| 寿命周期 | 量产 |
| ROHS | no |
| Transistor type | 双向可控硅 |
| Gate trigger current | 35 mA |
| Operating Temperature Range | - 40 C~+ 125 C |
| Holding Current | 35mA |
| Off-state voltage (Vdrm) | 600 V |
| Termination type | SMD/SMT |
| On-state rms current | 8A |
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