STB33N60M2
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Specification
| Rds On | 125 mOhms |
| Pd-Power Dissipation | 190 W |
| Termination type | SMD/SMT |
| Continuous drain current | 26 A |
| VDS | 600 V |
| 工厂最小包装 | 1000 |
| 寿命周期 | 量产 |
| ROHS | no |
| Qg | 45.5 nC |
| Transistor polarity | MOSFET |
| Package | TO-263-3 |
| Operating Temperature Range | - 55 C~+ 150 C |
| Circuit Branch Number | 1 Channel |
| VGS | 25 V |
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