STB33N60M2

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Specification
Rds On | 125 mOhms |
Pd-Power Dissipation | 190 W |
Termination type | SMD/SMT |
Continuous drain current | 26 A |
VDS | 600 V |
工厂最小包装 | 1000 |
寿命周期 | 量产 |
ROHS | no |
Qg | 45.5 nC |
Transistor polarity | MOSFET |
Operating Temperature Range | - 55 C~+ 150 C |
Package | TO-263-3 |
Circuit Branch Number | 1 Channel |
VGS | 25 V |
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STB33N60M2 Releted Information
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