RQ3E120BNTB

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Specification
VDS | 30 V |
Continuous drain current | 12 A |
Pd-Power Dissipation | 2 W |
Rds On | 6.6 mOhms |
Termination type | SMD/SMT |
工厂最小包装 | 1 |
寿命周期 | 量产 |
ROHS | no |
Circuit Branch Number | 1 Channel |
Operating Temperature Range | 150°C(TJ) |
VGS | 20 V |
Qg | 29 nC |
Transistor polarity | MOSFET |
Package | HSMT-8 |
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