RQ3E120BNTB
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Specification
| VDS | 30 V |
| Pd-Power Dissipation | 2 W |
| Continuous drain current | 12 A |
| Rds On | 6.6 mOhms |
| Termination type | SMD/SMT |
| 工厂最小包装 | 1 |
| 寿命周期 | 量产 |
| ROHS | no |
| Package | HSMT-8 |
| Circuit Branch Number | 1 Channel |
| Operating Temperature Range | 150°C(TJ) |
| VGS | 20 V |
| Qg | 29 nC |
| Transistor polarity | MOSFET |
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