HGTD1N120BNS9A
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Specification
| Pd-Power Dissipation | 60 W |
| Collector Current Ic | 5.3 A |
| Package | TO-252AA-3 |
| Gate Threshold Voltage-VGE(th) | 20 V |
| 工厂最小包装 | 2500 |
| 寿命周期 | 量产 |
| ROHS | no |
| Height | 2.3 mm |
| Operating Temperature Range | - 55 C~+ 150 C |
| Max, gate / emitter voltage | 20 V |
| Termination type | SMD/SMT |
| Collector-emitter voltage | 1200 V |
| Length | 6.6 mm |
| Width | 6.1 mm |
HGTD1N120BNS9A Releted Information
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