FQB55N10TM
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Specification
| Rds On | 26 mOhms |
| Continuous drain current | 55 A |
| Termination type | SMD/SMT |
| VDS | 100 V |
| Pd-Power Dissipation | 3.75 W |
| 工厂最小包装 | 800 |
| 寿命周期 | 量产 |
| ROHS | no |
| VGS | 25 V |
| Operating Temperature Range | - 55 C~+ 175 C |
| Height | 4.83 mm |
| Package | TO-263-3 |
| Length | 10.67 mm |
| Width | 9.65 mm |
| Circuit Branch Number | 1 Channel |
| Transistor polarity | MOSFET |
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