MCR12DSN-1G
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Specification
| Gate trigger voltage | 1V |
| Package | TO-251-3 |
| 工厂最小包装 | 75 |
| 寿命周期 | 量产 |
| ROHS | no |
| On-state rms current | 12 A |
| Holding Current | 6mA |
| Maximum Breakover Current IBO | 100 A |
| Length | 6.73 mm |
| Width | 2.38 mm |
| Gate trigger current | 0.2 mA |
| Max. gate threshold reverse voltage | 18 V |
| Off-state voltage (Vdrm) | 800 V |
| Operating Temperature Range | - 40 C~+ 110 C |
| Transistor type | SCRs |
| Termination type | Through Hole |
| Height | 6.35 mm |
Others include "MCR12DSN-1G" parts
The following parts include 'MCR12DSN-1G'
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