IRGIB6B60KDPBF
In stock
- IRGIB6B60KDPBF Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
| Package | TO-220-3 |
| Pd-Power Dissipation | 38 W |
| 工厂最小包装 | 2000 |
| 寿命周期 | 停产 |
| ROHS | no |
| Width | 4.8 mm |
| Gate Threshold Voltage-VGE(th) | +/- 20 V |
| Length | 10.6 mm |
| Collector Current Ic | 11 A |
| Operating Temperature Range | - 55 C~+ 175 C |
| Max, gate / emitter voltage | +/- 20 V |
| Termination type | Through Hole |
| Collector-emitter voltage | 600 V |
| Height | 16 mm |
Others include "IRGIB6B60KDPBF" parts
The following parts include 'IRGIB6B60KDPBF'
IRGIB6B60KDPBF Releted Information
- Popular Products
FEATURED PRODUCT SOMRON
-
-
-
IRFB7430PBF
Infineon
N沟道 40V 195A
Learn More >
-
-
-
-
CY8CKIT-062S2-AI
Infineon
CY8C624ABZI-S2D44 Microcontroller Evaluation Kit 1MB RAM 64MB SPI NOR Flash Win
Learn More >
-
-
-
-
BSP135H6327XTSA1
Infineon
N沟道 600V 120mA(Ta) 1.8W(Ta) SOT-223-4
Learn More >
-
-
-
-
IPA60R280P7SXKSA1
Infineon
通孔 N 通道 600V 12A(Tc) 24W(Tc) PG-TO220 整包
Learn More >
-
-
-
-
FS200R12KT4RBOSA1
Infineon
Learn More >
-
-
-
-
BAT68E6327HTSA1
Infineon
Diode RF Schottky 8V 150mW 3-Pin SOT-23 T/R
Learn More >
-
-
-
-
IRFP4468PBF
Infineon
N沟道,100V,290A,2.6mΩ@10V
Learn More >
-
-
-
-
IRF2807PBF
Infineon
N沟道,75V,75A,13mΩ@10V
Learn More >
-
-
-
-
IAUCN10S7N021ATMA1
Infineon
Learn More >
-
-
-
-
BSZ120P03NS3GATMA1
Infineon
Trans MOSFET P-CH 30V 11A 8-Pin TSDSON EP T/R
Learn More >
-
-
View All Newest Products from Omron