IPG20N10S4L35ATMA1
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Specification
| VDS | 100 V |
| Qualification level | AEC-Q101 |
| Termination type | SMD/SMT |
| Continuous drain current | 20 A |
| Rds On | 29 mOhms, 29 mOhms |
| Pd-Power Dissipation | 43 W |
| 工厂最小包装 | 5000 |
| 寿命周期 | 量产 |
| ROHS | no |
| Package | TDSON-8 |
| Qg | 17.4 nC, 17.4 nC |
| Height | 1.27 mm |
| Circuit Branch Number | 2 Channel |
| Length | 5.9 mm |
| Transistor polarity | MOSFET |
| Operating Temperature Range | - 55 C~+ 175 C |
| VGS | 16 V |
| Width | 5.15 mm |
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IPG20N10S4L35ATMA1 Releted Information
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