IPD65R1K4C6ATMA1
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Specification
| Rds On | 1.26 Ohms |
| Continuous drain current | 3.2 A |
| Pd-Power Dissipation | 28 W |
| VDS | 650 V |
| Termination type | SMD/SMT |
| 工厂最小包装 | 2500 |
| 寿命周期 | 量产 |
| ROHS | no |
| Transistor polarity | MOSFET |
| VGS | 20 V |
| Qg | 10.5 nC |
| Height | 2.3 mm |
| Package | PG-TO252-3 |
| Width | 6.22 mm |
| Operating Temperature Range | - 55 C~+ 150 C |
| Length | 6.5 mm |
| Circuit Branch Number | 1 Channel |
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