IPB80N08S2L07ATMA1
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Specification
| Continuous drain current | 80 A |
| Termination type | SMD/SMT |
| VDS | 75 V |
| Qualification level | AEC-Q101 |
| Pd-Power Dissipation | 300 W |
| Rds On | 4.8 mOhms |
| 工厂最小包装 | 1 |
| 寿命周期 | 量产 |
| ROHS | no |
| Package | TO-263-3 |
| Length | 10 mm |
| Width | 9.25 mm |
| Transistor polarity | MOSFET |
| Operating Temperature Range | - 55 C~+ 175 C |
| Circuit Branch Number | 1 Channel |
| VGS | 20 V |
| Qg | 233 nC |
| Height | 4.4 mm |
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