IPB80N06S407ATMA2
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Specification
| Rds On | 7.1 mOhms |
| Pd-Power Dissipation | 79W(Tc) |
| VDS | 60 V |
| Qualification level | AEC-Q101 |
| Continuous drain current | 80 A |
| Termination type | SMD/SMT |
| 工厂最小包装 | 1000 |
| 寿命周期 | 量产 |
| ROHS | no |
| Height | 4.4 mm |
| Operating Temperature Range | -55°C~175°C(TJ) |
| Package | PG-TO263-3-2 |
| Transistor polarity | MOSFET |
| Circuit Branch Number | 1 Channel |
| Length | 10 mm |
| Width | 9.25 mm |
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