IPB80N03S4L03ATMA1

In stock
- IPB80N03S4L03ATMA1 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
Pd-Power Dissipation | 136 W |
Termination type | SMD/SMT |
Rds On | 2 mOhms |
Qualification level | AEC-Q101 |
VDS | 30 V |
Continuous drain current | 80 A |
工厂最小包装 | 7000 |
寿命周期 | 最后购买阶段 |
ROHS | no |
Width | 9.25 mm |
Qg | 140 nC |
Package | PG-TO263-3-2 |
VGS | 16 V |
Height | 4.4 mm |
Circuit Branch Number | 1 Channel |
Length | 10 mm |
Operating Temperature Range | - 55 C~+ 175 C |
Transistor polarity | MOSFET |
Others include "IPB80N03S4L03ATMA1" parts
The following parts include 'IPB80N03S4L03ATMA1'
IPB80N03S4L03ATMA1 Releted Information
- Popular Products
FEATURED PRODUCT SOMRON
-
-
-
S25FL256LAGNFM010
Infineon
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 3V/3.3V 256M-bit 256M/128M/64M x 1/2-bit/4-bit 8ns 8-Pin WSON EP Tray Automotive AEC-Q100
Learn More >
-
-
-
-
S25FS128SAGMFI100
Infineon
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 1.8V 128M-bit 128M/64M/32M x 1/2-bit/4-bit 8ns 8-Pin SOIC Tray
Learn More >
-
-
-
-
S25FL256LAGMFI001
Infineon
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 3V/3.3V 256M-bit 256M/128M/64M x 1/2-bit/4-bit 8ns 16-Pin SOIC W Tube
Learn More >
-
-
-
-
SPD03N60C3BTMA1
Infineon
MOSFET N-CH 650V 3.2A DPAK
Learn More >
-
-
-
-
BGA 524N6 E6329
Infineon
PG-TSNP-6-2
Learn More >
-
-
-
-
SPD03N60C3BTMA1
Infineon
MOSFET N-CH 650V 3.2A DPAK
Learn More >
-
-
-
-
IDH08G120C5XKSA1
Infineon
Diode Silicon Carbide Schottky 1200V 8A (DC) Through Hole PG-TO220-2-1
Learn More >
-
-
-
-
IRF7341TRPBFXTMA1
Infineon
Trans MOSFET N-CH Si 55V 4.7A 8-Pin SOIC N T/R
Learn More >
-
-
-
-
SMBT2222AE6327HTSA1
Infineon
Trans GP BJT NPN 40V 0.6A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R
Learn More >
-
-
-
-
S29GL064S70TFI040
Infineon
NOR Flash Parallel 3V/3.3V 64M-bit 8M x 8/4M x 16 70ns 48-Pin TSOP Tray
Learn More >
-
-
View All Newest Products from Omron