IPB65R045C7ATMA1

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Specification
Rds On | 45 mOhms |
VDS | 650 V |
Pd-Power Dissipation | 227 W |
Termination type | SMD/SMT |
Continuous drain current | 46 A |
工厂最小包装 | 1 |
寿命周期 | 量产 |
ROHS | yes |
Transistor polarity | MOSFET |
Package | PG-TO-263-3 |
Length | 10 mm |
Width | 9.25 mm |
Operating Temperature Range | - 55 C~+ 150 C |
Qg | 93 nC |
Height | 4.4 mm |
VGS | 10 V |
Circuit Branch Number | 1 Channel |
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