IPB35N10S3L26ATMA1

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Specification
Continuous drain current | 35 A |
Pd-Power Dissipation | 71 W |
Rds On | 20.3 mOhms |
Qualification level | AEC-Q101 |
VDS | 100 V |
Termination type | SMD/SMT |
工厂最小包装 | 1000 |
寿命周期 | 量产 |
ROHS | no |
VGS | 20 V |
Transistor polarity | MOSFET |
Qg | 39 nC |
Height | 4.4 mm |
Operating Temperature Range | - 55 C~+ 175 C |
Width | 9.25 mm |
Circuit Branch Number | 1 Channel |
Package | PG-TO263-3 |
Length | 10 mm |
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