IPB120N06S403ATMA2
In stock
- IPB120N06S403ATMA2 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
| Pd-Power Dissipation | 167W(Tc) |
| Qualification level | AEC-Q101 |
| Continuous drain current | 120 A |
| VDS | 60 V |
| Termination type | SMD/SMT |
| Rds On | 2.8 mOhms |
| 工厂最小包装 | 1000 |
| 寿命周期 | 量产 |
| ROHS | no |
| Package | PG-TO263-3-2 |
| Operating Temperature Range | -55°C~175°C(TJ) |
| Width | 9.25 mm |
| Transistor polarity | MOSFET |
| Height | 4.4 mm |
| Length | 10 mm |
| Circuit Branch Number | 1 Channel |
Others include "IPB120N06S403ATMA2" parts
The following parts include 'IPB120N06S403ATMA2'
IPB120N06S403ATMA2 Releted Information
- Popular Products
FEATURED PRODUCT SOMRON
-
-
-
IKW15N120T2
Infineon
Learn More >
-
-
-
-
SPD04N80C3ATMA1
Infineon
Trans MOSFET N-CH 800V 4A 3-Pin(2+Tab) DPAK T/R
Learn More >
-
-
-
-
IPT015N10N5
Infineon
N沟道,100V,300A,1.3mΩ@10V
Learn More >
-
-
-
-
SPD02N80C3ATMA1
Infineon
Trans MOSFET N-CH 800V 2A 3-Pin(2+Tab) DPAK T/R
Learn More >
-
-
-
-
S25FL256SAGBHVD00
Infineon
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 3V/3.3V 256M-bit 256M/128M/64M x 1/2-bit/4-bit 14.5ns 24-Pin BGA Tray
Learn More >
-
-
-
-
IKY40N120CS6XKSA1
Infineon
IGBT 沟槽型场截止 1200V 80A 500W 通孔 PG-TO247-4-2
Learn More >
-
-
-
-
S26KL512SDABHV030
Infineon
NOR Flash Hyper 3V/3.3V 512M-bit 64M x 8 96ns 24-Pin Fortified BGA Tray
Learn More >
-
-
-
-
S26KL512SDABHI020
Infineon
NOR Flash Hyper 3V/3.3V 512M-bit 64M x 8 96ns 24-Pin Fortified BGA Tray
Learn More >
-
-
-
-
SPP80P06PH
Infineon
Trans MOSFET P-CH 60V 80A 3-Pin(3+Tab) TO-220 Automotive AEC-Q101
Learn More >
-
-
-
-
S25FL256LAGMFV000
Infineon
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 3V/3.3V 256M-bit 256M/128M/64M x 1/2-bit/4-bit 8ns 16-Pin SOIC W Tray
Learn More >
-
-
View All Newest Products from Omron