IPB083N10N3GATMA1

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Specification
Continuous drain current | 80 A |
Package | TO-263-3 |
Pd-Power Dissipation | 125 W |
工厂最小包装 | 1 |
寿命周期 | 量产 |
ROHS | no |
VGS | 20 V |
Width | 9.25 mm |
Transistor polarity | MOSFET |
Qg | 55 nC |
Height | 4.4 mm |
Length | 10 mm |
Circuit Branch Number | 1 Channel |
Termination type | SMD/SMT |
Operating Temperature Range | - 55 C~+ 175 C |
VDS | 100 V |
Rds On | 7.2 mOhms |
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