IKW30N65ET7XKSA1
In stock
- IKW30N65ET7XKSA1 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
| Package | TO-247-3 |
| Pd-Power Dissipation | 188 W |
| Gate Threshold Voltage-VGE(th) | 20 V |
| Collector Current Ic | 60 A |
| 工厂最小包装 | 1 |
| 寿命周期 | 量产 |
| ROHS | yes |
| Termination type | Through Hole |
| Operating Temperature Range | - 40 C~+ 175 C |
| Collector-emitter voltage | 650 V |
| Max, gate / emitter voltage | 20 V |
Others include "IKW30N65ET7XKSA1" parts
The following parts include 'IKW30N65ET7XKSA1'
IKW30N65ET7XKSA1 Releted Information
- Popular Products
FEATURED PRODUCT SOMRON
-
-
-
BFR106E6327HTSA1
Infineon
RF 晶体管 NPN 15V 210mA 5GHz 700mW 表面贴装型 SOT-23-3
Learn More >
-
-
-
-
IRLML0100TRPBF
Infineon
N沟道,100V,1.6A,220mΩ@10V
Learn More >
-
-
-
-
IPB600N25N3GATMA1
Infineon
Trans MOSFET N-CH 250V 25A 3-Pin(2+Tab) D2PAK T/R
Learn More >
-
-
-
-
IDH20G120C5XKSA1
Infineon
Diode Schottky 1.2KV 56A 2-Pin(2+Tab) TO-220 Tube
Learn More >
-
-
-
-
IKP20N60TXKSA1
Infineon
IGBT 沟槽型场截止 600V 40A 166W 通孔 PG-TO220-3
Learn More >
-
-
-
-
IRFR5305TRLPBF
Infineon
Trans MOSFET P-CH Si 55V 31A 3-Pin(2+Tab) DPAK T/R
Learn More >
-
-
-
-
CYBT-213043-MESH
Infineon
CYBT-213043-MESH
Learn More >
-
-
-
-
BSC123N08NS3G
Infineon
BSC123N08NS3G
Learn More >
-
-
-
-
BAT6404WH6327XTSA1
Infineon
Learn More >
-
-
-
-
IDDD20G65C6XTMA1
Infineon
Diode Schottky SiC 650V 51A 10-Pin HDSOP EP T/R
Learn More >
-
-
View All Newest Products from Omron