IHW30N110R3FKSA1

In stock
- IHW30N110R3FKSA1 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
Pd-Power Dissipation | 333 W |
Package | TO-247-3 |
工厂最小包装 | 30 |
寿命周期 | 最后购买阶段 |
ROHS | no |
Max, gate / emitter voltage | 20 V |
Collector Current Ic | 60 A |
Operating Temperature Range | - 40 C~+ 175 C |
Gate Threshold Voltage-VGE(th) | 20 V |
Collector-emitter voltage | 1100 V |
Termination type | Through Hole |
Others include "IHW30N110R3FKSA1" parts
The following parts include 'IHW30N110R3FKSA1'
IHW30N110R3FKSA1 Releted Information
- Popular Products
FEATURED PRODUCT SOMRON
-
-
-
SPD09P06PLGBTMA1
Infineon
Trans MOSFET P-CH 60V 9.7A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
Learn More >
-
-
-
-
SPA17N80C3XKSA1
Infineon
Trans MOSFET N-CH 800V 17A 3-Pin(3+Tab) TO-220FP Tube
Learn More >
-
-
-
-
SPA17N80C3XKSA1
Infineon
Trans MOSFET N-CH 800V 17A 3-Pin(3+Tab) TO-220FP Tube
Learn More >
-
-
-
-
S29AL008J70TFI023
Infineon
NOR Flash Parallel 3V/3.3V 8M-bit 1M x 8/512K x 16 70ns 48-Pin TSOP T/R
Learn More >
-
-
-
-
SPP11N60C3XKSA1
Infineon
Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220 Tube
Learn More >
-
-
-
-
SPA11N80C3XKSA1
Infineon
Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-220FP Tube
Learn More >
-
-
-
-
IPDQ60R010S7XTMA1
Infineon
MOSFET HIGH POWER_NEW
Learn More >
-
-
-
-
S25FL128LAGMFI010
Infineon
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 3V/3.3V 128M-bit 128M/64M/32M x 1/2-bit/4-bit 8ns 8-Pin SOIC Tray
Learn More >
-
-
-
-
SPD09P06PLGBTMA1
Infineon
Trans MOSFET P-CH 60V 9.7A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
Learn More >
-
-
-
-
SPB17N80C3ATMA1
Infineon
Trans MOSFET N-CH 800V 17A 3-Pin(2+Tab) D2PAK T/R
Learn More >
-
-
View All Newest Products from Omron